• Next generation oxide semiconductor materials and devices

Next generation oxide semiconductor materials and devices

The session covers fundamental properties including structural, chemical, and electrical properties of alkali earth stannates, ASnO3 (A = Ca, Sr, and Ba). Especially, electron-doped BaSnO3 is one of the essential energy materials because it improves the conversion efficiency of solar cells. In 2012, Prof. Char at SNU found that electron-doped BaSnO3 single crystals exhibit extremely high electron mobility of 320 cm2/Vs at room temperature, and therefore BaSnO3 has been extensively studied. On the other hand, Prof. Ohta at HU is studying the electron transport properties of SrSnO3, which has a larger bandgap. Recently, both groups have collaborated on the topic of two-dimensional electron gases that form at the polar heterointerface. They used the electric field thermopower modulation method to clarify the effective thickness of the two-dimensional electron gases. We will cover both experimental and theoretical aspects of the topics.
The goal of this session is to provide a platform to present and discuss recent advances in the growth, characterization, material design, and property prediction and optimization of functional materials and to bring together researchers, scientists, and students to exchange ideas. The satellite session will be held at Research Institute for Electronic Science, Hokkaido University from Nov. 2 and 3, 2023.


Hokkaido University

Hokkaido University


Venue: Research Institute for Electronic Science, HU
Open to anyone interested; no pre-registration required
Programme available here

Ref.: Lab. of Functional Thin Film Materials, HU; Dept. of Physics and Astronomy, SNU